Ge Wafer

Epi-ready single crystal Ge wafer

 
 
 
Product:Germanium (Ge) wafer
Purity:99.9999% (6N)
Material property:Crystal structure: cubic
Lattice constant: a = 5.6576 Å
Bandgap: 0.67 eV (300 K)
Melting point: 937.4 °C
Dimension:

• 2'' × 0.4 mm, 2'' × 0.5 mm

• 4'' × 0.5 mm

• Other dimensions available

Orientation:<100> / <110> / <111> / others
Conductive type:Undoped native / n-type / p-type
Resistivity:

• 1 - 50 Ω·cm for undoped native wafer (exhibiting n-type behavior)                                   

• 0.01 - 0.07 Ω·cm for n-type and p-type doped wafers

Etch pit density (EPD):

• Low 1000 - 5000 cm-2

• High < 10000 cm-2

Polishing:Single side / double side epi-polished
Surface roughness:< 0.5 nm