KTaO3 Wafer

Epi-ready single crystal KTaO3 Wafer

 
 
 
Product:KTaO3 Wafer
Material property:Crystal structure: Cubic Perovskite
Lattice constant: a = 3.989 Å
Density: 7.015 g/cm3
Hardness: 6 Mohs
Thermal Conductivity: 0.17 W m-1 K-1 at 300 K                                                        
Refractive Index: 2.14
Melting point: 1500 °C
Growth Method:Top seed flux growth
Dimension:

• 5 × 5 × 0.5 mm

• 10 × 10 × 0.5 mm

• Other sizes customizable

Orientation:<100> / <110> / <111>
Polishing:Single side / double side epi-polished
Surface roughness:< 0.5 nm