SrLaAlO4 Wafer

Epi-ready single crystal SrLaAlO4 wafers

 
 
 
Product:SrLaAlO4 Wafer
Material property:Crystal structure: Tetragonal
Lattice constant: a = 3.756 Å, b = 3.756 Å, c = 12.630 Å                                 
Density: 5.92 g/cm3
Hardness: 6 Mohs
Dielectric Constant: ~17
Melting point: 1650 °C
Growth Method:CZ
Dimension:

• 5 × 5 × 0.5 mm

• 10 × 10 × 0.5 mm

• Other sizes customizable

Orientation:<100> / <001>
Polishing:Single side / double side epi-polished
Surface roughness:< 0.5 nm


 

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