Sapphire (Al2O3) Wafer

Highest industrial standard sapphire wafer, epi-ready polished surface

 
 
 

Product:Single crystal sapphire Al2O3 wafer
Purity:>99.99%
Material property:Crystal structure: hexagonal
Lattice constant: a = 4.76 Å, c = 12.99 Å
Density: 3.97 g/cm3
Hardness: 9 mohs
Thermal expansion coefficient: 7.5 × 10-6 /°C
Thermal conductivity: 12.56 W/(m.K) @ 400 °C
Dielectric constant: 11.58
Melting point: 2040 °C
Dimension:

• 5 × 5 × 0.5 mm

• 10 × 10 × 0.5 mm

• 2'' × 0.43 mm

• 4'' × 0.65 mm

• 6'' × 1.0 mm

• others

Orientation:

• C-plane <0001>

• A-plane <11-20>

• R-plane <1-102>

• M-plane <10-10>

• Others

Polishing:Single side / double side epi-polished
Surface roughness:< 0.3 nm (ultra-flat for the polished surface)
Applications:

• Due to the small lattice mismatch, sapphire substrates is the popular epitaxial substrate for a wide range of materials, such as group III-V gallium nitride (GaN), zinc oxide (ZnO), superconductor, magnetic, etc

• Sapphire is the epi-substrate for commercial light emitting diode (LED) industry

• Sapphire is chemically and physically stable

Useful Links:Properties and applications of sapphire (Al2O3)